Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2007-07-03
2007-07-03
Lindsay, Jr., Walter (Department: 2812)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C257SE43001
Reexamination Certificate
active
10873269
ABSTRACT:
A magnetic random access memory includes a substrate; a first ferromagnetic layer; a magnetic tunnel junction (MTJ) device provided on a same side of the substrate as the first ferromagnetic layer; and a wiring layer provided between the first ferromagnetic layer and the MTJ device. The MTJ device includes a second ferromagnetic layer opposing to the wiring layer. A first perpendicular projection of the first ferromagnetic layer on the substrate and a second perpendicular projection of the second ferromagnetic layer on the substrate are different in area, and one of the first and second perpendicular projections contains the other.
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Honjo Hiroaki
Saitho Shinsaku
Lindsay, Jr. Walter
NEC Corporation
Sughrue & Mion, PLLC
Ullah Elias
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