Magnetic random access memory and fabricating method thereof

Details Magnetic random access memory and fabricating method thereof Magnetic random access memory and fabricating method thereof

1999-05-17

2000-12-26

Nelms, David

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

438 3, H01L 2100

Patent

active

061658030

ABSTRACT:
An improved and novel fabrication method for a magnetic element, and more particularly its use in a magnetoresistive random access memory (MRAM) is provided. An MRAM device has memory elements and circuitry for managing the memory elements. The circuitry includes transistor (12a), digit line (29), etc., which are integrated on a substrate (11). The circuitry is fabricated first under the CMOS process and then magnetic memory elements (43, 44) are defined by transforming portions (42b) of a magnetic blanket layer into an insulative material. The magnetic blanket layer, which includes magnetic layers (40,42) and a non-magnetic layer (41) sandwiched by the magnetic layers, which are deposited on conductor layer (34). The insulative, or inactive, portions (42b) define and separate the plurality of memory elements (43, 44).

REFERENCES:
patent: 5804458 (1998-09-01), Tehrani et al.
patent: 5940319 (1999-08-01), Durlam et al.
patent: 6048739 (2000-04-01), Hurst et al.

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