Magnetic random access memory

Details Magnetic random access memory Magnetic random access memory

2005-09-13

2008-12-23

Richards, N Drew (Department: 4174)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C438S038000

Reexamination Certificate

active

07468541

ABSTRACT:
A magnetic random access memory includes a magnetic recording element which includes a fixed layer whose magnetization direction is fixed, a recording layer whose magnetization direction changes, and a nonmagnetic layer provided between the fixed layer and the recording layer, the recording layer having a first running portion, a first projecting portion and a second projecting portion, the first running portion which runs in a direction of axis of easy magnetization, the first and second projecting portions which project from two side surfaces of the first running portion, a mask layer which is arranged above the first running portion, and a first sidewall layer and a second sidewall layer which are formed on two side surfaces of the mask layer, respectively, and arranged on the first projecting portion and the second projecting portion, respectively.

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