Magnetic random access memory

Details Magnetic random access memory Magnetic random access memory

2006-06-06

2008-12-02

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S421000, C257S002000, C257S003000, C257S004000, C257S005000, C360S324100, C365S149000, C438S003000, C438S133000

Reexamination Certificate

active

07459759

ABSTRACT:
A magnetic random access memory described in embodiments of the present invention comprises a conductive line, a soft magnetic material which surrounds the conductive line, a gap disposed in a part of the soft magnetic material, and a magneto-resistive element in which a part of a vertical magnetization film as a magnetic free layer is positioned in the gap and in which a vertical magnetization film as a magnetic pinned layer is positioned outside the gap.

REFERENCES:
patent: 6256223 (2001-07-01), Sun
patent: 6545906 (2003-04-01), Savtchenko et al.
patent: 2005/0018478 (2005-01-01), Nagase et al.
patent: 2006/0067008 (2006-03-01), Haratani
patent: 2004-153181 (2004-05-01), None
patent: 2005-129587 (2005-05-01), None
U.S. Appl. No. 10/862,617, filed Jun. 8, 2004, Toshihiko Nagase et al.

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