Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2006-10-24
2006-10-24
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C365S173000
Reexamination Certificate
active
07126201
ABSTRACT:
A technique is provided in which an offset magnetic field of a memory cell of a MRAM is reduced more effectively. The MRAM of the present invention is composed of a free layer (11) which has a reversible free spontaneous magnetization, a fixed layer (6) which has fixed spontaneous magnetization, and a spacer layer (10) formed of non-magnetic interposed between the free layer (11) and the fixed layer (6). The fixed layer (6) is formed such that orange peel effect and magneto-static coupling effect does not substantially influence on the free layer (11).
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Kools, J.C.S. et al., “Effect of Finite Magnetic Film Thickness on Néel Coupling in Spin Valves”Journal of Applied Physics, vol. 85, No. 8, Apr. 15, 1999.
Matsutera Hisao
Numata Hideaki
Huynh Andy
Michael & Best & Friedrich LLP
NEC Corporation
Taylor Earl N.
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