Magnetic random access memory

Details Magnetic random access memory Magnetic random access memory

2006-10-24

2006-10-24

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C365S173000

Reexamination Certificate

active

07126201

ABSTRACT:
A technique is provided in which an offset magnetic field of a memory cell of a MRAM is reduced more effectively. The MRAM of the present invention is composed of a free layer (11) which has a reversible free spontaneous magnetization, a fixed layer (6) which has fixed spontaneous magnetization, and a spacer layer (10) formed of non-magnetic interposed between the free layer (11) and the fixed layer (6). The fixed layer (6) is formed such that orange peel effect and magneto-static coupling effect does not substantially influence on the free layer (11).

REFERENCES:
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patent: 6292389 (2001-09-01), Chen et al.
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patent: 2003-078185 (2003-03-01), None
Kools, J.C.S. et al., “Effect of Finite Magnetic Film Thickness on Néel Coupling in Spin Valves”Journal of Applied Physics, vol. 85, No. 8, Apr. 15, 1999.

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