Magnetic random access memory

Details Magnetic random access memory Magnetic random access memory

2005-08-09

2005-08-09

Zarneke, David (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S295000, C257S296000, C257S421000

Reexamination Certificate

active

06927468

ABSTRACT:
A write line is covered with a yoke material. The recording layer of an MTJ element is exchange-coupled to the yoke material. The total magnetic volume ΣMsi×ti of the recording layer of the MTJ element and a portion of the yoke material that is exchange-coupled to the recording layer is smaller than the magnetic volume ΣMsi′×ti′ of the remaining portion of the yoke material that covers the write line.

REFERENCES:
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patent: 6831857 (2004-12-01), Amano et al.
patent: 2002/0034094 (2002-03-01), Saito et al.
patent: 2002/0109167 (2002-08-01), Kang et al.
patent: 2003/0161181 (2003-08-01), Saito et al.
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patent: 2004/0021189 (2004-02-01), Yoda et al.
patent: 2004/0160855 (2004-08-01), Saito et al.
patent: 2005/0018478 (2005-01-01), Nagase et al.
patent: 1 120 790 (2001-08-01), None

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