Magnetic random access memory

Details Magnetic random access memory Magnetic random access memory

2005-01-18

2005-01-18

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C257S295000, C257S421000, C257S659000

Reexamination Certificate

active

06844204

ABSTRACT:
A data selection line (write line) is disposed right on a MTJ element. Upper and side surfaces of the data selection line are coated with yoke materials which have a high permeability. The yoke materials are separated from each other by a barrier layer. Similarly, a write word line is disposed right under the MTJ element. The lower and side surfaces of the write word line are also coated with the yoke materials which have the high permeability. The yoke materials on the lower and side surfaces of the write word line are also separated from each other by the barrier layer.

REFERENCES:
patent: 6174737 (2001-01-01), Durlam et al.
patent: 6211090 (2001-04-01), Durlam et al.
patent: 6417561 (2002-07-01), Tuttle
patent: 6525957 (2003-02-01), Goronkin et al.
R. Scheuerlein, et al., ISSCC 2000/Session 7/ TD: Emerging Memory Device and Technologies/Paper TA 7.2, pp. 128-129, 94-95, 409-410, “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell”, 2000.

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