Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2005-03-29
2005-03-29
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257S030000
Reexamination Certificate
active
06873023
ABSTRACT:
A write word line is disposed right under an MTJ element. The write word line extends in an X direction, and a lower surface of the line is coated with a yoke material which has a high permeability. A data selection line (read/write bit line) is disposed right on the MTJ element. A data selection line extends in a Y direction intersecting with the X direction, and an upper surface of the line is coated with the yoke material which has the high permeability. At a write operation time, a magnetic field generated by a write current flowing through a write word line B and data selection line functions on the MTJ element by the yoke material with good efficiency.
REFERENCES:
patent: 5940319 (1999-08-01), Durlam et al.
patent: 6548849 (2003-04-01), Pan et al.
Amano Minoru
Asao Yoshiaki
Iwata Yoshihisa
Kishi Tatsuya
Saito Yoshiaki
Rose Kiesha
Zarabian Amir
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