Magnetic multilayered film, magnetoresistance effect element and

Stock material or miscellaneous articles – Composite – Of inorganic material

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

428694T, 428693TS, 428694TM, 428141, 428900, 360113, G11B 566

Patent

active

059586117

ABSTRACT:
According to the present invention, a magnetic multilayered film includes an oxide antiferromagnetic layer, a pinned ferromagnetic layer which is pinned by the oxide antiferromagnetic layer, a non-magnetic metal layer and a free ferromagnetic layer which are stacked on a substrate in order. A surface roughness Ra of the oxide antiferromagnetic layer at the side of the pinned ferromagnetic layer is set to no greater than 0.6 nm, and a crystal grain size D of the oxide antiferromagnetic layer is set to a value in the range of 10 to 40 nm. Thus, the magnetic multilayered film has the large exchange-coupling magnetic field and MR ratio and MR sensitivity. The magnetic multilayered film may be applied to a magnetoresistance effect element which may also applied to a magnetoresistance device, such as, a magnetoresistance effect type head. The magnetoresistance effect element having such a magnetic multilayered film is capable of obtaining high outputs. The magnetoresistance effect type head having such a magnetoresistance effect element which is excellent in current efficiency and capable of detecting signals magnetically recorded in high density, particularly in ultrahigh density exceeding 3 Gbit/inch.sup.2 and further obtaining large outputs.

REFERENCES:
patent: 4949039 (1990-08-01), Gruenberg
B. Dieny, et al., "Giant Magnetoresistance In Soft Ferromagnetic Multilayers", Physical Review B, vol. 43, No. 1, Jan. 1, 1991, pp. 1297-1300. Multilayers (M=Ni.sub.80 Fe.sub.15 Co.sub.5, Ni.sub.80 Co.sub.20, Co.sub.90 Fe.sub.10)", Jpn. J. Appl. Phys., vol. 32, Part 2, No. 10A, Oct. 1, 1993, pp. 1441-1443.
T. Lin, et al. "Improved Exchange Coupling Between Ferromagnetic Ni-Fe and Antiferromagnetic Ni-Mn-Based Films", J. Appl. Phys. Lett., vol. 65, No. 9, Aug. 29, 1994, pp. 1183-1185.
F. Koike, et al., "Spin Valve GMR Films with Antiferromagnetic .sigma.-Fe.sub.2 O.sub.3 Film", Journal of Jpn. Appl. Mag., vol. 20, No. 2, 1996, pp. 365-368.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Magnetic multilayered film, magnetoresistance effect element and does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic multilayered film, magnetoresistance effect element and, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic multilayered film, magnetoresistance effect element and will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-701385

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.