Magnetic multilayer structure having magnetoresistance ratio and

Details Magnetic multilayer structure having magnetoresistance ratio and Magnetic multilayer structure having magnetoresistance ratio and

1997-04-25

1999-09-07

Resan, Stevan A.

Stock material or miscellaneous articles

Composite

Of inorganic material

427128, 427130, 2041922, 360113, 338 32R, 324252, 428900, G11B 539

Patent

active

059485531

ABSTRACT:
A spin valve type multilayered magnetic structure has Fe-base soft magnetic crystalline layer having a mean grain size equal to or less than 30 nanometers and sandwiching a non-magnetic spacer layer, and the Fe-base soft magnetic crystalline layer is expressed as Fe-M-B where M is at least one transition metal selected from the group consisting of Sc, Ti, V, Cr, Y, Zr, Nb, Mo, La, Hf, Ta and W and B is selected from the group consisting of C, B and N; and the spin valve type multilayered magnetic structure achieves a large magnetoresistance ratio equal to or greater than 10.

REFERENCES:
patent: 5473492 (1995-12-01), Terunuma et al.
patent: 5677625 (1997-10-01), Dieny
patent: 5780175 (1998-07-01), Chen et al.

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