Magnetic memory with self-aligned magnetic keeper structure

Details Magnetic memory with self-aligned magnetic keeper structure Magnetic memory with self-aligned magnetic keeper structure

2005-08-09

2005-08-09

Cao, Phat X. (Department: 2814)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S239000

Reexamination Certificate

active

06927075

ABSTRACT:
A magnetic tunneling junction (MTJ) memory cell is formed with a keeper structure on its upper conductor (write line). The keeper structure is formed by a self aligned process as three pieces: two vertical soft magnetic side pieces contacting an upper soft magnetic layer. The structure so formed completely surrounds an upper conductor and terminates on a horizontal extension of the MTJ sense layer.

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patent: 6413788 (2002-07-01), Tuttle
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patent: 6498747 (2002-12-01), Gogl et al.
patent: 6806127 (2004-10-01), Butcher et al.
patent: 6816431 (2004-11-01), Lu et al.
patent: 2002/0055190 (2002-05-01), Anthony

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