Magnetic memory using superconductor ring

Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k

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365161, 365162, 365160, 505700, 505704, 505832, 505833, 357 5, G11C 1144

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active

050118170

ABSTRACT:
A noble unit cell structure in a magnetic memory is disclosed, in which a ferromagnetic film is sandwiched between first and second wires at a cross-over area, and third and fourth wires are provided so as to sandwich the first wire. The third wire is contacted with the first wire so as to form a ring portion surrounding the ferromagnetic film and the second wire. The fourth wire is isolated from the first wire. At least the first, second and third wires are made of superconductive material. The ferromagnetic film has a uniaxial anisotropy along the second wire and its magnetization direction can be reversed by applying pulse currents to the second and fourth wires in an information writing process. In a reading process, the magnetization direction of the ferromagnetic film can be recognized by detecting either one of a superconductive state or a normal conductive state at the ring portion of the first and third wires. The conductive state of the ring portion is determined by a combination of a direction of an induced diamagnetic current in the ring portion, which is caused by tilting the magnetization direction of the ferromagnetic film, and a direction of a bias current in the first wire at the ring portion with a predetermined condition of critical currents for the first and third wires at the ring portion.

REFERENCES:
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patent: 4494131 (1985-01-01), Ohta
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IEEE Transactions of Magnetics, vol. MAG-15, No. 1, Jan. 79, pp. 486-487, "Weak-Link SQUIDs", by Jillie et al.
IBM Technical Disclosure Bulletin, vol. 20, No. 7, Dec. 77, pp. 2839-2840, "Josephson Memory Cell with Mag. Film", by Broom et al.
Electronic Products, Outlook, Jan. 11, 84, pp. 17-18, "Superconductive Logic Survives IBM Bailout", by Fanis.

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