Magnetic memory using perpendicular magnetization film

Details Magnetic memory using perpendicular magnetization film Magnetic memory using perpendicular magnetization film

2005-01-18

2005-01-18

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C365S158000, C365S171000, C365S173000, C360S324200

Reexamination Certificate

active

06844605

ABSTRACT:
In a magnetoresistive element of a magnetic memory, a inversion field Hc of at least a first magnetic layer is given byHc=2⁢(Ku-2⁢π⁢ ⁢Ms2⁢f)Mswhere Ku and Ms are the perpendicular magnetic anisotropy constant and saturation magnetization of the first magnetic layer. The inversion field Hc is set smaller than a magnetic field generated by a magnetic field generation mechanism. Letting T be the film thickness of the first magnetic layer and W be the width and length, f is a factor given byin-line-formulae description="In-line Formulae" end="lead"?f=7×10−13(T/W)4−2×10−9(T/W)3+3×10−6(T/W)2−0.0019(T/W)+0.9681in-line-formulae description="In-line Formulae" end="tail"?A magnetic memory manufacturing method is also disclosed.

REFERENCES:
patent: 6005798 (1999-12-01), Sakakima et al.
patent: 6055179 (2000-04-01), Koganei et al.
patent: 6219275 (2001-04-01), Nishimura
patent: 6373609 (2002-04-01), Mizrahi
patent: 6639765 (2003-10-01), Adachi et al.
E. Y. Chen, et al., “Submicron Spin Valve Magnetoresistive Random Access Memory Cell” Journal Of Applied Physics, vol. 81, No. 8, pp. 3992-3994 (Apr. 15, 1997).

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