Magnetic memory structure

Details Magnetic memory structure Magnetic memory structure

2005-06-14

2005-06-14

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Interconnection arrangements

Magnetic

C365S063000, C365S171000, C365S214000

Reexamination Certificate

active

06906941

ABSTRACT:
The invention includes a stacked magnetic memory structure. The magnetic memory structure includes a stacked magnetic memory structure. The first layer includes a first plurality of magnetic tunnel junctions. A second layer is formed adjacent to the first layer. The second layer includes a second plurality of magnetic tunnel junctions. The stacked magnetic memory structure further includes a common first group conductor connected to each of the first plurality of magnetic tunnel junctions and the second plurality of magnetic tunnel junctions.

REFERENCES:
patent: 6404674 (2002-06-01), Anthony et al.
patent: 6577527 (2003-06-01), Freitag et al.
patent: 6603678 (2003-08-01), Nickel et al.
patent: 6724674 (2004-04-01), Abraham et al.
patent: 6754124 (2004-06-01), Seyyedy et al.

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