Magnetic memory element utilizing spin transfer switching

Details Magnetic memory element utilizing spin transfer switching Magnetic memory element utilizing spin transfer switching

2009-03-05

2010-11-09

Dang, Trung (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257SE29323

Reexamination Certificate

active

07829964

ABSTRACT:
A magnetic memory element utilizing spin transfer switching includes a pinned layer, a tunneling barrier layer and a free layer structure. The tunneling barrier layer is disposed on the pinned layer. The free layer structure includes a composite free layer. The composite free layer includes a first free layer, an insert layer and a second free layer. The first free layer is disposed on the tunneling barrier layer and has a first spin polarization factor and a first saturation magnetization. The insert layer is disposed on the first free layer. The second free layer is disposed on the insert layer and has a second spin polarization factor smaller than the first spin polarization factor and a second saturation magnetization smaller than the first saturation magnetization. Magnetization vectors of the first free layer and the second free layer are arranged as parallel-coupled.

REFERENCES:
patent: 7126202 (2006-10-01), Huai et al.
patent: 7241631 (2007-07-01), Huai et al.
patent: 7242045 (2007-07-01), Nguyen et al.
patent: 7430135 (2008-09-01), Huai et al.
patent: 2007/0063237 (2007-03-01), Huai et al.
patent: 2007/0076469 (2007-04-01), Ashida et al.
patent: 2007/0159734 (2007-07-01), Nguyen et al.
patent: 2007/0171694 (2007-07-01), Huai et al.
patent: 2008/0180991 (2008-07-01), Wang
patent: 2009/0050991 (2009-02-01), Nagai et al.
Jun Hayakawa et al., “Current-Induced Magnetization Switching in MgO Barrier Based Magnetic Tunnel Junctions with CoFeB/Ru/CoFeB Synthetic Ferrimagnetic Free Layer,” Japanese Journal of Applied Physics, vol. 45, No. 40, 2006, pp. L1057-L1060.
Wei-Chuan Chen et al., “Spin Transfer Switching in Magnetic Tunnel Junction Using a Composite Free Layer,” Electronics and Optoelectronics Research Lab. (EOL), Industrial Technology Research Institute, Hsinchu, 310 Taiwan.
Cheng-Tyng Yen et al., “Reduction in critical current density for spin torque transfer switching with composite free layer,” Applied Physics Letters 93, 092504 (2008).
Haiwen Xi et al., “Antiferromagnetic thickness dependence of exchange biasing,” The American Physical Society, Physical Review B, vol. 61 No. 1, pp. 80-83, Jan. 1, 2000.

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