Magnetic memory element having controlled nucleation site in...

Details Magnetic memory element having controlled nucleation site in... Magnetic memory element having controlled nucleation site in...

2005-06-14

2005-06-14

Wilson, Christian (Department: 2824)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C257S295000

Reexamination Certificate

active

06905888

ABSTRACT:
A ferromagnetic data layer of a magnetic memory element is formed with a controlled nucleation site. In some embodiments, the nucleation site may be a divot in the data layer or a protrusion from the data layer. A Magnetic Random Access Memory (“MRAM”) device may include an array of magnetic memory elements having data layers with controlled nucleation sites.

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McMicheal R D et al: Domain Wall Traps for Low-field Switching of Submicron Elements: Journal of Applied Physics, American Institute of Physics NY, US vol. 87 No. 9 May 1, 2000.
Semet et al: Field Electron Emission from Indvidiual Carbon Nanotubes fo a Vertically Aligned Array. Applied Physics letter vol. 80, No. 2 Jul. 8, 2002 pp. 343-345.

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