Magnetic memory element and magnetic memory device

Details Magnetic memory element and magnetic memory device Magnetic memory element and magnetic memory device

2011-04-26

2011-04-26

Tran, Tan N (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S422000, C257S424000, C257S427000, C257SE29167

Reexamination Certificate

active

07932573

ABSTRACT:
A magnetic memory element having a layer structure containing a fixing layer (pinned layer: PL) having a magnetization direction fixed unidirectionally, a nonmagnetic dielectric layer (TN1) in contact with the fixing layer (PL), and a memory layer (free layer: FL) having a first surface in contact with the nonmagnetic dielectric layer (TN1) and a second surface on the opposite to the first surface, the magnetization direction of the memory layer (FL) having a reversible magnetization direction in response to the current through the layer structure. The entire surface of the first surface of the memory layer (FL) is covered with the nonmagnetic dielectric layer (TN1) and in the joint surface of the nonmagnetic dielectric layer (TN1) and the fixing layer (PL), the first surface of the nonmagnetic dielectric layer (TN1) is exposed in a manner of surrounding the joint surface.

REFERENCES:
patent: 6980468 (2005-12-01), Ounadjela
patent: 2005/0012129 (2005-01-01), Saito
patent: 2005/0116308 (2005-06-01), Bangert
Huai, Y., et al. “Observation of spin-transfer switching in deep submicron-sized and low resistance magnetic tunnel junctions”, Applied Physics Letters, Apr. 19 2004, pp. 3118-3120, vol. 84 No. 16, American Institute of Physics.
Albert, F.J., et al., “Spin-polarized current switching of a Co thin film nanomagnet”, Applied Physics Letters, Dec. 4, 2000, pp. 3809-3811, vol. 77 No. 23, American Institute of Physics.

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