Magnetic memory device having spin wave oscillator arranged...

Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head

Reexamination Certificate

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C360S125310, C360S125740, C360S324200, C365S158000, C365S171000

Reexamination Certificate

active

07813087

ABSTRACT:
A magnetic memory device includes a magnetic tunnel junction element having a plurality of ferromagnetic layers stacked with a dielectric layer interposed between the adjacent ferromagnetic layers and storing magnetic information through reversal of magnetization of at least one of the magnetization layers, and a spin wave oscillator having a magnetization free layer, a nonmagnetic layer stacked on the magnetization free layer, a magnetization pinned layer stacked on the nonmagnetic layer, and a pair of electrodes adapted to apply current in the direction perpendicular to the surface of the magnetization free layer, the nonmagnetic layer and the magnetization pinned layer to thereby generate a spin wave. The spin wave oscillator is arranged in vicinity of the magnetic tunnel junction element to allow heating of the magnetic tunnel junction element and reversal of magnetization.

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