Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2006-10-17
2006-10-17
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C257SE21665
Reexamination Certificate
active
07122385
ABSTRACT:
A magnetic memory device includes first and second magnetoresistance elements. The first and second magnetoresistance elements store information and are provided apart from each other in a first direction. A first wiring to apply a magnetic field to the first and second magnetoresistance elements is provided along the first direction. A first magnetic circuit is formed along a side of the first wiring and has a notch in its portion between the first and second magnetoresistance elements.
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Anya Igwe U.
Baumeister B. William
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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