Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2007-09-11
2007-09-11
Prenty, Mark V. (Department: 2822)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S734000
Reexamination Certificate
active
11232017
ABSTRACT:
A magnetic memory device comprises a plurality of magneto-resistance effect elements arranged in a matrix form. The each of a plurality of magneto-resistance effect elements have a pattern shape which substantially internally touches an ellipse having major and minor axes of the magneto-resistance effect element as major and minor axes thereof and a pitch between the adjacent magneto-resistance effect elements in a direction of the major axis is longer than that in a direction of the minor axis.
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Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Prenty Mark V.
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