Magnetic memory device and write/read method of the same

Static information storage and retrieval – Magnetic shift registers – Bidirectional

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S130000, C365S158000, C365S173000, C365S225500, C365S243500, C977S933000

Reexamination Certificate

active

07859881

ABSTRACT:
A magnetic memory device includes a first magnetic line which has a plurality of cells made of magnetic domains partitioned by domain walls, and in which information is recorded in each cell, a first write element formed at one end portion of the first magnetic line, and a first read element formed at the other end portion of the first magnetic line.

REFERENCES:
patent: 3369225 (1968-02-01), Fuller
patent: 6834005 (2004-12-01), Parkin
patent: 2002/0186514 (2002-12-01), Childress et al.
patent: 2004/0251232 (2004-12-01), Chen et al.
patent: 2004/0252538 (2004-12-01), Parkin
patent: 2004/0252539 (2004-12-01), Parkin
patent: 2004/1025253 (2004-12-01), Parkin
patent: 2005/0078509 (2005-04-01), Parkin
patent: 2005/0078511 (2005-04-01), Parkin
patent: 2005/0094427 (2005-05-01), Parkin
patent: 2005/0226043 (2005-10-01), Parkin et al.
patent: 2006/0120132 (2006-06-01), Parkin
D.H. Smith, “A Magnetic Shift Register Employing Controlled Domain Wall Motion”, IEEE Transactions on Magnetics, vol. MAG-1, No. 4, Dec. 1965, pp. 281-284.
J.S. Sallo, et al., “An “Orthocore” Magnetic Shift Register”, IEEE Transactions on Magnetics, vol. MAG-2, No. 3, Sep. 1966, pp. 197-201.
A. Yamaguchi, et al., “Real-Space Observation of Current-Driven Domain Wall Motion in Submicron Magnetic Wires”, Physical Review Letters, vol. 92, No. 7, 077205-1, Feb. 20, 2004, 4 pages.
Nikkei Electronics, No. 14, Mar. 2005, one page.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Magnetic memory device and write/read method of the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic memory device and write/read method of the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic memory device and write/read method of the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4180432

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.