Magnetic memory device and methods for making same

Semiconductor device manufacturing: process – Having magnetic or ferroelectric component

Reexamination Certificate

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Details

C257SE43004, C427S131000, C365S158000, C365S171000, C365S173000

Reexamination Certificate

active

11021268

ABSTRACT:
In one embodiment, a memory device includes a plurality of magnetic data cells and a magnetic reference cell extending uninterrupted along more than one of the plurality of data cells.

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