Magnetic memory device and method of manufacturing the same

Details Magnetic memory device and method of manufacturing the same Magnetic memory device and method of manufacturing the same

2008-07-29

2008-07-29

Landau, Matthew C. (Department: 2815)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C257S421000, C257SE27006, C257SE21665, C365S158000, C365S171000, C365S173000

Reexamination Certificate

active

11135337

ABSTRACT:
A magnetic memory device includes a first interconnection which runs in a first direction, a second interconnection which runs in a second direction different from the first direction, a magnetoresistive element which is arranged at the intersection of and between the first and second interconnections, and a metal layer which is connected to the magnetoresistive element and has a side surface that partially coincides with a side surface of the magnetoresistive element.

REFERENCES:
patent: 6746875 (2004-06-01), Okazawa et al.
patent: 6914284 (2005-07-01), Nakajima et al.
patent: 6965138 (2005-11-01), Nakajima et al.
patent: 2004/0081841 (2004-04-01), Nakajima
patent: 2004/0109349 (2004-06-01), Nakajima et al.
patent: 2004/0188732 (2004-09-01), Fukuzumi
patent: 2000-353791 (2000-12-01), None
patent: 2002-299584 (2002-10-01), None
Roy Scheuerlein, et al., “A 10ns Read and Write Non Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in each Cell”, ISSCC Digest of Technical Papers, 2000, Session 7, Paper TA 7.2.
Masahiga Sato et al., “Spin-Valve-Like Properties and Annealing Effect in Ferromagnetic Tunnel Junctions”, IEEE Transaction on Magnetics, 1997, vol. 33, No. 5, pp. 3553-3555.
Masahige Sato, et al., “Spin-Valve-Like Properties of Ferromagnetic Tunnel Junctions”, Jpn. J. Appl. Phys., 1997, vol. 36, Part 2, pp. 200-201.
Koichiro Inomata et al., “Spin-Dependent Tunneling between a Soft Ferromagnetic Layer and Hard Magnetic Nanosize Particles”, Jpn. J. Appl. Phys., 1997, vol. 36, Part 2, 1380-1383.

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