Magnetic memory device and method of manufacturing the same

Details Magnetic memory device and method of manufacturing the same Magnetic memory device and method of manufacturing the same

2007-08-28

2007-08-28

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S422000

Reexamination Certificate

active

11045476

ABSTRACT:
In a magnetic memory device, and a method of manufacturing the same, the magnetic memory device includes a switching device, and a magnetic tunneling junction (MTJ) cell connected to the switching device, the MTJ cell including a lower electrode connected to the switching device and a lower magnetic layer, a tunneling film containing fluorine, an upper magnetic layer, and a capping layer, sequentially stacked on the lower electrode.

REFERENCES:
patent: 2002/0141233 (2002-10-01), Hosotani et al.
patent: 2004/0042128 (2004-03-01), Slaughter et al.
patent: 10-2003-0063091 (2003-07-01), None

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