Magnetic memory device and method of manufacturing the same

Details Magnetic memory device and method of manufacturing the same Magnetic memory device and method of manufacturing the same

2007-11-06

2007-11-06

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S238000, C438S381000, C438S712000, C257SE21008, C257S091000, C257S218000, C257S665000

Reexamination Certificate

active

11171323

ABSTRACT:
A method of manufacturing a magnetic memory device includes forming an insulation layer on a substrate, forming a lower electrode on the insulation layer, forming a magneto-resistive film on an upper surface of the lower electrode, the magneto-resistive film including an insulation barrier layer and a plurality of magnetic films stacked on both sides of the insulation barrier layer, stacking a mask layer on the magneto-resistive film, performing ion etching on the magneto-resistive film, using the mask layer as a mask, thereby forming a magneto-resistive element, forming an insulation film on upper surfaces of the mask, the magneto-resistive element and the lower electrode, and etching the insulation film with an ion beam such that a side surface of the magneto-resistive element is exposed.

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