Magnetic memory device and method for manufacturing the same

Details Magnetic memory device and method for manufacturing the same Magnetic memory device and method for manufacturing the same

2007-10-31

2010-06-08

Wilson, Allan R. (Department: 2815)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C257S421000, C257SE29164, C365S145000, C365S158000

Reexamination Certificate

active

07732223

ABSTRACT:
A magnetic memory device and a manufacturing method thereof are provided. The magnetic memory device can include a word line, a freely switchable layer, a fixed layer, a dielectric layer, and a bit line. The freely switchable layer can be electrically connected to a diffusion region at one side of the word line, and the fixed layer can be horizontally adjacent to the freely switchable layer. The dielectric layer can be provided between the freely switchable layer and the fixed layer, and the bit line can be electrically connected to the fixed layer.

REFERENCES:
patent: 5106776 (1992-04-01), Shen et al.
patent: 6621730 (2003-09-01), Lage
patent: 6667526 (2003-12-01), Komori
patent: 6992342 (2006-01-01), Motoyoshi et al.
patent: 7145796 (2006-12-01), Fukuzumi et al.
patent: 2006/0027847 (2006-02-01), Koo et al.
patent: 10-2000-0075528 (2002-06-01), None

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