Magnetic memory device, a method for manufacturing a...

Details Magnetic memory device, a method for manufacturing a... Magnetic memory device, a method for manufacturing a...

2007-03-20

2007-03-20

Menz, Doug (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S421000, C257S295000, C257S296000

Reexamination Certificate

active

10764061

ABSTRACT:
This invention proposes a stable magnetic memory device that is equipped with a storage cell having a MTJ, wherein variation in the coercive force (Hc) of a ferromagnetic free layer is suppressed, and a switching characteristic of a bit of a MRAM is improved, and there is no write error. Namely in a magnetic memory device equipped with a first wiring, a second wiring (bit line) intersecting with the first wiring, and a storage cell for writing/reading information of a magnetic spin at an intersecting area of the first wiring and the second wiring, a partial sidewall portion electrically connecting to the storage cell of the second wiring (bit line) has a forward tapered form having a contact angle relative to a top surface of the storage cell being 45 degrees or more.

REFERENCES:
patent: 6210818 (2001-04-01), Saito
patent: 6801414 (2004-10-01), Amano et al.
patent: 6819532 (2004-11-01), Kamijo
patent: 6879475 (2005-04-01), Kishi et al.

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