Magnetic memory device

Details Magnetic memory device Magnetic memory device

2003-03-10

2009-10-06

Wojciechowicz, Edward (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S618000, C365S137000, C365S158000, C365S173000

Reexamination Certificate

active

07598577

ABSTRACT:
A magnetic memory device comprises magneto-resistance elements each including a cylindrical fixed magnetization layer, an insulating film which covers an external surface of the fixed magnetization layer, and a free magnetization layer which faces the fixed magnetization layer through the insulating film and covers a surface of the insulating film, wherein a magnetization direction of the fixed magnetization layer is parallel to a central axis direction of the cylinder.

REFERENCES:
patent: 2002/0149962 (2002-10-01), Horiguchi
patent: 2000-163950 (2000-06-01), None

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