Magnetic memory device

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field

Reexamination Certificate

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Reexamination Certificate

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10919337

ABSTRACT:
A magnetic memory device and a method of manufacturing the same, which are advantageous not only in that both the improvement of storage sensitivity and the reduction of power consumption can be achieved, but also in that a buried wiring having low resistance and high reliability can be formed in reduced time in a stable manner. Soft magnetic material layers forming the cladding structure of a word line and a bit line constituting an MRAM are formed by electroless plating, and the soft magnetic material layers are formed around main wirings (especially copper) of the word line and bit line so that the soft magnetic material layers individually have a uniform, satisfactory thickness, and further they are deposited with improved uniformity on the surface with which the electroless plating solution is in contact, and therefore the uniformity of cladding is improved at not only the bottom surface but also the sidewall of a wiring trench.

REFERENCES:
patent: 6153443 (2000-11-01), Durlam et al.
patent: 6174737 (2001-01-01), Durlam et al.
patent: 6943038 (2005-09-01), Meixner et al.
patent: 2003/0151079 (2003-08-01), Jones et al.
patent: 2004/0156232 (2004-08-01), Saito et al.
patent: 2005/0009212 (2005-01-01), Grynkewich et al.
patent: 2003209226 (2003-07-01), None
patent: 2003-297593 (2003-10-01), None
French Search Report Oct. 21, 2005.
Wang et al., IEEE Trans. Magn. 33 (1997), pp. 4,498-4,512.
ISSCC Digest of Technical Papers, pp. 128-129, Feb. 2000.

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