Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2006-06-06
2006-06-06
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257S295000, C257S427000, C438S003000, C428S692100, C428S693100
Reexamination Certificate
active
07057249
ABSTRACT:
A memory device includes a first surface having memory chips disposed thereon, the memory chips defining an exterior face of the memory device, and a second surface opposite the exterior face. A magnetically permeable shield layer extends over at least one of the exterior face and the second surface of the memory device.
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Anthony Thomas C.
Bhattaharyya Manoj K.
Bloomquist, legal representative Judy
Holden Anthony P.
Stobbs Colin A.
Nelms David
Tran Long
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