Magnetic memory device

Details Magnetic memory device Magnetic memory device

2005-11-22

2005-11-22

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S421000, C365S158000, C365S171000, C365S173000, C365S225500

Reexamination Certificate

active

06967386

ABSTRACT:
A magnetic memory device can information with a low power consumption by inhibiting the coercive force from being increased by a demagnetizing field in a free layer, regardless of the thickness, moment, and the like of the free layer, even when the size of a magnetoresistive element is reduced. In the magnetic memory device which includes a magnetoresistive element (10) having a free layer (16) composed of a ferromagnetic material, and an electrode layer (22) composed of a nonmagnetic conductor, disposed adjacent to the free layer (16) of the magnetoresistive element (10), and having a part in contact with the free layer (16), and in which the direction of magnetization of the free layer (16) is reversed by a magnetic field generated by the electrode layer (22), a magnetic layer (23) composed of a magnetic material is provided on a part of a surface of the electrode layer (22) adjacent to the free layer (16) and out of contact with the free layer (16) so as to increase the apparent area of the free layer (16).

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