Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Controlled by nonelectrical – nonoptical external signal
Reexamination Certificate
2011-01-25
2011-01-25
Wilson, Allan R (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Controlled by nonelectrical, nonoptical external signal
C257S421000, C360S314000
Reexamination Certificate
active
07875903
ABSTRACT:
A magnetic memory device includes a magnetoresistive element and a first wiring layer. The magnetoresistive element includes a fixed layer, a recording layer, and a non-magnetic layer interposed therebetween. The first wiring layer extends in a first direction and generates a magnetic field for recording data in the magnetoresistive element. The recording layer includes a base portion extending in a second direction rotated from the first direction by an angle falling within a range of more than 0° to not more than 20°, and first and second projections projecting from the first and second sides of the base portion in a third direction perpendicular to the second direction. The third and fourth sides of the base portion are inclined with respect to the third direction in the same rotational direction as a rotational direction in which the second direction is rotated.
REFERENCES:
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5650958 (1997-07-01), Gallagher et al.
patent: 6005800 (1999-12-01), Koch et al.
patent: 6104633 (2000-08-01), Abraham et al.
patent: 6765824 (2004-07-01), Kishi et al.
patent: 6917087 (2005-07-01), Chen
patent: 6949779 (2005-09-01), Kai et al.
patent: 6956270 (2005-10-01), Fukuzumi
patent: 7057253 (2006-06-01), Braun
patent: 7095071 (2006-08-01), Fukuzumi et al.
patent: 7099176 (2006-08-01), Lin et al.
patent: 7170775 (2007-01-01), Lin et al.
patent: 7245524 (2007-07-01), Yoda et al.
patent: 7277317 (2007-10-01), Le Phan
patent: 7326982 (2008-02-01), Iwata et al.
patent: 7411263 (2008-08-01), Nakayama et al.
patent: 2004/0256688 (2004-12-01), Braun
patent: 2005/0276090 (2005-12-01), Yamagishi
patent: 2006/0038211 (2006-02-01), Leuschner et al.
patent: 2006/0082933 (2006-04-01), Kishi et al.
patent: 2006/0083057 (2006-04-01), Nakayama et al.
patent: 2006/0146602 (2006-07-01), Lin et al.
patent: 2006/0181813 (2006-08-01), Fukuzumi
patent: 2007/0013015 (2007-01-01), Kai et al.
patent: 11-273337 (1999-10-01), None
patent: 2003-163330 (2003-06-01), None
patent: 2004-47992 (2004-02-01), None
patent: 2004-128067 (2004-04-01), None
patent: 3548036 (2004-04-01), None
patent: 2004-280892 (2004-10-01), None
Office Action issued Aug. 20, 2010, in Japanese Patent Application No. 2005-207500 (with English translation).
Fukuzumi Yoshiaki
Ikegawa Sumio
Kai Tadashi
Kishi Tatsuya
Nakayama Masahiko
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Wilson Allan R
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