Magnetic memory device

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Controlled by nonelectrical – nonoptical external signal

Reexamination Certificate

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Details

C257S421000, C360S314000

Reexamination Certificate

active

07875903

ABSTRACT:
A magnetic memory device includes a magnetoresistive element and a first wiring layer. The magnetoresistive element includes a fixed layer, a recording layer, and a non-magnetic layer interposed therebetween. The first wiring layer extends in a first direction and generates a magnetic field for recording data in the magnetoresistive element. The recording layer includes a base portion extending in a second direction rotated from the first direction by an angle falling within a range of more than 0° to not more than 20°, and first and second projections projecting from the first and second sides of the base portion in a third direction perpendicular to the second direction. The third and fourth sides of the base portion are inclined with respect to the third direction in the same rotational direction as a rotational direction in which the second direction is rotated.

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Office Action issued Aug. 20, 2010, in Japanese Patent Application No. 2005-207500 (with English translation).

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