Magnetic memory cell having a soft reference layer

Details Magnetic memory cell having a soft reference layer Magnetic memory cell having a soft reference layer

2005-08-30

2005-08-30

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C365S158000, C365S171000

Reexamination Certificate

active

06936903

ABSTRACT:
An exemplary magnetic memory cell comprises a data layer, a soft reference layer having a lower magnetic energy than the data layer, and spacer layer between the data layer and the soft reference layer.

REFERENCES:
patent: 5936293 (1999-08-01), Parkin
patent: 6404674 (2002-06-01), Anthony et al.
patent: 6538917 (2003-03-01), Tran et al.
patent: 6570783 (2003-05-01), Deak
patent: 6576969 (2003-06-01), Tran et al.
Cowburn, et al., “Sensing Magnetic Fields Using Superparamagnetic Nanomagnets,” May 1, 2000, Journal of Applied Physics, vol. 87, No. 9, pp. 7082-7084.

Affiliated with

Also associated with

Rating

Magnetic memory cell having a soft reference layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic memory cell having a soft reference layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic memory cell having a soft reference layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3447692