Magnetic memory cell and magnetic random access memory

Details Magnetic memory cell and magnetic random access memory Magnetic memory cell and magnetic random access memory

2007-10-04

2010-11-23

Menz, Douglas M (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S295000

Reexamination Certificate

active

07838953

ABSTRACT:
A magnetic memory cell and a magnetic random access memory that are highly reliable and low-power consuming. An upper electrode having a connecting area smaller than the area of a ferromagnetic free layer of a magnetic memory cell is connected to the ferromagnetic free layer. A current is applied to produce an uneven magnetic field over the magnetic memory cell, whereby spin-transfer torque magnetization reversal can be realized with low current and at small write error rate.

REFERENCES:
patent: 5695864 (1997-12-01), Slonczewski
patent: 6603677 (2003-08-01), Redon et al.
patent: 2002-305337 (2002-10-01), None
T. Miyazaki and N. Tezuka,, “Giant Magnetic tunneling Effect in Fe/A12O3/Fe Junction”, Japanese of Magnetism and Magnetic Material 139, L231 (Oct. 1995).
S. Yuasa et al., “Giant Room-Temperature Magnetoresistance in Single-Crystal Fe/MgO/Fe Magnetic Tunnel Junctions”, Nature Material 3, 868(Dec. 2004).

Affiliated with

Also associated with

Rating

Magnetic memory cell and magnetic random access memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic memory cell and magnetic random access memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic memory cell and magnetic random access memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4183817