Magnetic memory and manufacturing method thereof

Details Magnetic memory and manufacturing method thereof Magnetic memory and manufacturing method thereof

2005-09-06

2008-12-30

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S295000, C257SE21665, C365S171000, C365S173000

Reexamination Certificate

active

07470964

ABSTRACT:
A magnetic memory capable of reducing diffusion of ferromagnetic material into semiconductor element area is provided. A magnetic memory1includes plural memory areas3disposed in two-dimension of m rows and n columns (m, n are integers of 2 or more). The magnetic memory1includes semiconductor layer6including drain area32aand source area32cfor write transistor32, magnetic material layer8including TMR element4and write wiring31, and wiring layer7including bit wirings13aand13band word wiring14being sandwiched between semiconductor layer6and magnetic material layer8. Since wiring layer7is sandwiched between magnetic material layer8and semiconductor layer6, the ferromagnetic material diffusing (migrates) from TMR element4hardly reaches to semiconductor layer6. Thus, the diffusion of the ferromagnetic material into the drain area32aand the source area32ccan be reduced.

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