Magnetic memory, a method of manufacturing the same, and...

Details Magnetic memory, a method of manufacturing the same, and... Magnetic memory, a method of manufacturing the same, and...

2011-03-01

2011-03-01

Bryant, Kiesha R (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257S004000, C257S005000, C257S009000, C257SE45002, C257SE45003

Reexamination Certificate

active

07897950

ABSTRACT:
A magnetic memory includes a magnetic tunneling junction element having a reference layer, a tunnel barrier layer and a recording layer laminated in order, with information being written to the recording layer in accordance with spin injection magnetization reversal caused by a current, and information written to the recording layer being read out using a current. The magnetic tunneling junction element is disposed on a plug connected to a selection transistor, and a sidewall insulating film covering a side portion of the recording layer of the magnetic tunneling junction element is formed.

REFERENCES:
patent: 2005/0057992 (2005-03-01), Yagami
patent: 2005-150482 (2005-06-01), None

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