Magnetic-infrared-emitting diode

Coherent light generators – Particular component circuitry – Optical pumping

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357 29, 357 19, 357 61, 372 43, H01L 3300

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044504608

ABSTRACT:
A plate of a semiconductor having a narrow energy gap such as InSb, is applied with a magnetic field in parallel therewith and further supplied with a current in parallel therewith also as well as across the magnetic field, whereby an infrared radiation can be emitted perpendicular thereto in a wide range of temperature from room temperature to liquid nitrogen temperature.
Consequently, an infrared emitting device, for instance, an infrared laser diode can be fabricated and operated at room temperature without necessity of a dewar filled with refrigerating material such as liquid nitrogen. Various kinds of compact infrared-emitting equipments such as an infrared radar can be realized by modulating the current supplied to the above infrared emitting device.

REFERENCES:
patent: 3167663 (1965-01-01), Melngailis
patent: 4170781 (1979-10-01), Cox
patent: 4273596 (1981-06-01), Gutierrez

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