Magnetic head of magnetoresistance effect type and process...

Details Magnetic head of magnetoresistance effect type and process... Magnetic head of magnetoresistance effect type and process...

2004-12-10

2009-02-10

Blouin, Mark (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

07489482

ABSTRACT:
In the case of magnetic head of magnetoresistance effect type whose breakdown voltage is as low as 0.3 V, it is impractical to ignore even a very small amount of static electricity that occurs during fabrication or use. In one embodiment, the desired magnetic head is produced by forming an SiO2layer on a silicon slider, thereby forming an SOI substrate; forming on the SOI substrate circuits to protect a TMR element from overvoltage and a read-write circuit; forming field effect transistors from an Si semiconductor layer (formed by reduction of the SiO2layer or epitaxial growth on the SiO2layer); forming three electrodes (source, gate, drain) on the Si semiconductor layer; forming a Schottky diode by Schottky contact (metal) with the Si semiconductor layer; forming overvoltage protective circuits of aluminum wiring on the SOI substrate; and forming a TMR element.

REFERENCES:
patent: 6577476 (2003-06-01), Childress et al.
patent: 6710983 (2004-03-01), Voldman
patent: 2003/0214763 (2003-11-01), Childress et al.
patent: 2000-358608 (2002-12-01), None

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