Magnetic head magneto-resistive element with c-shaped multi-laye

Details Magnetic head magneto-resistive element with c-shaped multi-laye Magnetic head magneto-resistive element with c-shaped multi-laye

1995-06-07

1997-12-30

Tupper, Robert S.

Dynamic magnetic information storage or retrieval

Head

Hall effect

G11B 539

Patent

active

057037388

ABSTRACT:
A magneto-resistive (MR) element of a thin-film magnetic head comprises a three-layer structure. The three-layer structure comprises a layer of soft magnetic material, a thin non-magnetic decoupling layer and an MR layer, and has an ellipse-like C-shape with a gap in its back passive region. The axis of easy magnetization of the MR layer is parallel to the main axis of the ellipse-like C-shape three-layered structure. The MR layer is longitudinally biased by an exchange bias field developed by exchange coupling between the antiferromagnetic layer and the MR layer. The antiferromagnetic layer is deposited in direct contact only in the back passive region of the MR layer of a level sufficient to maintain that region of the MR layer in a linear response mode. Spaced conductor leads are connected directly to the MR layer within the front active region to define a detection region, and through the antiferromagnetic layer in the back passive region.

REFERENCES:
patent: 4755897 (1988-07-01), Howard
patent: 4771349 (1988-09-01), Tsang
patent: 4954920 (1990-09-01), Yamada et al.
patent: 4967298 (1990-10-01), Mowry
patent: 5268806 (1993-12-01), Goubau et al.
patent: 5325253 (1994-06-01), Chen et al.
patent: 5327313 (1994-07-01), Nishioka et al.

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