Magnetic field sensors

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 4, 357 20, 357 55, H01L 2712, H01L 2722, H01L 2906

Patent

active

049262262

ABSTRACT:
A magnetodiode for use in a magnetic sensor using a semiconductive element (advantageously of a direct band-gap, high mobility material such as gallium arsenide) that has a superlattice formed by an n-i-p-i doping profile or superstructure. Such a superlattice is used to provide a region of long recombination times for the normal flow of charge carriers from which the carriers are deflected into short recombination time regions by a magnetic field being sensed.

REFERENCES:
patent: 4754310 (1988-06-01), Coe
patent: 4793872 (1988-12-01), Meunier et al.
N. J. Kawai et al., "Magnetic field-individual semimetal-to-semiconducator & Transition in In Az-Ga Sb superlattices ,"Applical Physics Letters, 36(5) Mar. 1980 pp. 369 to 371.
G. H. Doehler, "Doping superlattices", Journal of Vacuum Science of Technology, 16(5) May/Jun. 1979, pp. 851 to 856.
J. C. Maan et al., "Quantum Transport in GaAc doping superlattices", of Vacuum Science & Technology B1(2) (Apr.-Jun. 1983) pp. 289-292.
O. S. Luters et al, "Sensitivity Limits on SOS Magnetodiodes", IEEE Transactions on Electron Devices, vol. ED-27, No. 11, pp. 2156-2157 (Nov. 1980).
M. Kimura and S. Takahashi, "Si Magnetic Sensor Composed of Two Combined PIN Diodes," Electronics Letters, vol. 22, No. 16, pp. 830-832 (Jul. 31, 1986).
A. Chovet et al, "Noise Limitations of Magnetodiodes," Sensors and Actuators, 4 (1983), pp. 147-153, based on a paper presented at Solid-State Transducers 83, Delft, the Netherlands, May 31-Jun. 3, 1983.
S. Kataoka, "Recent Development of Magnetoresistive Devices and Applications," Circulars of the Electrotechnical Laboratory, No. 182, UDC 621.382:537.621.2, pp. 1-52, Agency of Industrial Science and Technology, 2-Chome Nagata-Cho, Chiyoda-ku, Tokyo, Japan (Dec. 1974).
S. Kordic, "Integrated Silicon Magnetic-Field Sensors", Sensors and Actuators, vol. 10, Nos. 3 & 4, pp. 347-378 (Nov./Dec. 1986).
T. Yamada, "A New Highly Sensitive Magneto-resistive Effect in Semiconductors", Proceedings of the IX International Conference on the Physics of Semiconductors, vol. 2, Moscow, Jul. 23-29, 1968, pp. 672-675.
G. H. Dohler, "Physics and Applications of Doping Superlattices", a paper from pp. 270-284 of the book Two-Dimensional Systems, Physics and New Devices; Proceedings of the International Winterschool, Mauternsdorf Austria, 1986, published by Springer Verlag, Berlin 1986.
G. H. Dohler, "n-i-p-i Doping Superlattices-Metastable Semiconductors with Tunable Properties", Journal of Vacuum Science and Technology, B, vol. 1, No. 2, Apr.-Jun. 1983, pp. 278-284.
J. Burtscher et al, "Die Rekombination in Thyristoren Und Gleichrichtern Aus Silizium: Ihr Einfluss Auf Die Durchlasskennlinie Und Das Freiwerdezeitverhalten", Solid-state Electronics, vol. 18, pp. 35-63 (Pergamon Press, Great Britain, 1975).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Magnetic field sensors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic field sensors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic field sensors will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-624711

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.