Magnetic-field sensor with split-drain MOSFETS

Details Magnetic-field sensor with split-drain MOSFETS Magnetic-field sensor with split-drain MOSFETS

1994-08-03

1996-02-06

Strecker, Gerard R.

Electricity: measuring and testing

Magnetic

Magnetometers

324260, 327510, 327581, G01R 3306, H03K 17687, H03K 1790

Patent

active

054898463

ABSTRACT:
A magnetic-field sensor has an array of split-drain transistors connected in parallel, each having a first, a second, and a third drain electrode, and a negative reference current generating transistor. A biasing circuit is utilized to bias the split-drain transistors in the saturated state, and to actuate the negative reference current generating transistor to generate a negative reference current. A first, a second, and a third current mirror are all controlled by a reference voltage. The second current mirror is coupled to the second drain electrode of each of the split-drain transistors to keep the reference voltage at a reference level. The first current mirror is coupled to the first drain electrode of each of the split-drain transistors to generate a first sensed current, and the third current mirror is coupled to the third drain electrode of each of the split-drain transistors to generate a second sensed current. A positive reference current generating transistor is controlled by the reference voltage to generate a positive reference current. The first and second sensed currents, and the negative and positive reference currents can be utilized to indicate the strength of the magnetic field.

REFERENCES:
patent: 4607271 (1986-08-01), Popovic et al.
patent: 4677380 (1987-06-01), Popovic et al.
patent: 4683429 (1987-07-01), Popovic

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