Magnetic field sensor with split collector contacts for high sen

Details Magnetic field sensor with split collector contacts for high sen Magnetic field sensor with split collector contacts for high sen

1992-03-30

1993-01-12

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

324252, 257421, 257422, 257423, 257427, H01L 2722

Patent

active

051794292

ABSTRACT:
A magnetic field sensor is provided by a lateral bipolar transistor having a base region formed of a first conductivity type, an emitter region formed of a second conductivity type disposed in the base region for emitting charge carriers, and a collector region of the second conductivity type disposed in the base region for receiving charge carriers from the emitter region. A first and second metallic contact are connected to the collector region for splitting the collector current into first and second collector contact currents. In the presence of a magnetic field, a number of the charge carriers are deflected toward the first or the second metallic contact, depending on the orientation of the magnetic field, causing an imbalance in the first and second collector contact currents. The noise at the metallic contacts is the same as the noise of a single collector transistor which effectively correlates the noise with itself and cancels any distortion associated with the noise.

REFERENCES:
patent: 4607271 (1986-08-01), Popovic et al.
patent: 4987467 (1991-01-01), Popovic
patent: 4999692 (1991-03-01), Ristic et al.
patent: 5099298 (1992-03-01), Nakamura et al.

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