Magnetic field sensor with a hall element

Details Magnetic field sensor with a hall element Magnetic field sensor with a hall element

2011-01-18

2011-01-18

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S426000, C257S653000, C257SE23005

Reexamination Certificate

active

07872322

ABSTRACT:
A symmetrical vertical Hall element comprises a well of a first conductivity type that is embedded in a substrate of a second conductivity type and which is contacted by four contacts serving as current and voltage contacts. From the electrical point of view, such a Hall element with four contacts can be regarded as a resistance bridge formed by four resistors R1to R4of the Hall element. From the electrical point of view, the Hall element is then regarded as ideal when the four resistors R1to R4have the same value. The invention suggests a series of measures in order to electrically balance the resistance bridge. A first measure exists in providing at least one additional resistor. A second measure exists in locally increasing or reducing the electrical conductivity of the well. A third measure exists in providing two Hall elements that are electrically connected in parallel in such a way that their Hall voltages are equidirectional and their offset voltages are largely compensated.

REFERENCES:
patent: 4037150 (1977-07-01), Taranov et al.
patent: 4829352 (1989-05-01), Popovic et al.
patent: 4929993 (1990-05-01), Popovic
patent: 5057890 (1991-10-01), Falk et al.
patent: 5530345 (1996-06-01), Murari et al.
patent: 5548151 (1996-08-01), Funaki et al.
patent: 5572058 (1996-11-01), Biard
patent: 5920106 (1999-07-01), Oba et al.
patent: 6492697 (2002-12-01), Plagens et al.
patent: 6903429 (2005-06-01), Berndt et al.
patent: 0 362 493 (1989-07-01), None
patent: 3011679 (1991-01-01), None
Falk U: “A symmetrical vertical Hall-effect device”, Sensors and Actuators A (Physical), Bd. A22, Nr. 1-3, Mar. 1990, pp. 751-753, XP000358526 ISSN: 0924-4247.
Roumenin C S : “Parallel-field Hall microsensors: an overview”, Sensors and Actuators A (Physical), Bd. A30, No. 1-2 Jan. 1992, pp. 77-87, XP000277696 ISSN: 0924-4247.
Schurig E et al.: CMOS Integrated vertical Hall sensor with low offset:, Proceedings Eurosensors XVI, 16th European Conference on Solid-State Transducers, Prague, Czech Republic, 15.-18. Sep. 2002, pp. 868-871, XP002241233.
Steiner R et al. “Double-Hall sensor with self-compensated offset”, International Electron Devices Meeting, IEDM 97, Washington, D.C. USA, 7.-10. Dezember pp. 911-914, XP000855940 ISBN:0-7803-4100-7.
Schurig E et al: “A vertical Hall device in CMOS Integrated high-voltage technology”, Sensors and Actuators A (Physical), 97-98 (2002) 47-53.

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