Magnetic field sensor on elemental semiconductor substrate with

Details Magnetic field sensor on elemental semiconductor substrate with Magnetic field sensor on elemental semiconductor substrate with

1994-05-09

1996-02-13

Lateef, Marvin M.

Electrical resistors

Resistance value responsive to a condition

Magnetic field or compass

338 32H, 32420721, H01L 4300

Patent

active

054914612

ABSTRACT:
A magnetic field sensor apparatus that comprises an active layer of indium antimonide or indium arsenide supported on an elemental semiconductor substrate. Magnetoresistor sensors of indium antimonide and indium arsenide active layers on silicon and germanium substrate wafers are described. Means are described for providing reduced electric fields and parasitic conduction in the elemental semiconductor substrate. The means includes unique device geometries and buffer layers between the active layers and the substrate wafers.

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