Magnetic field sensor having high mobility thin indium antimonid

Details Magnetic field sensor having high mobility thin indium antimonid Magnetic field sensor having high mobility thin indium antimonid

1996-09-11

1999-03-16

Gellner, Michael L.

Electrical resistors

Resistance value responsive to a condition

Magnetic field or compass

338 32H, 360113, H01L 4300

Patent

active

058835644

ABSTRACT:
A magnetic field sensor is described that has a 0.25-0.6 micrometer thick magnetically active layer of very high electron mobility that consists essentially of epitaxial indium antimonide. The indium antimonide layer is disposed on a 0.03-1.0 micrometer thick buffer layer of In.sub.1-x Al.sub.x Sb, where "x" is about 0.01-0.2, that is substantially lattice-matched to the indium antimonide active layer.

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