Electricity: measuring and testing – Magnetic – Magnetometers
Reexamination Certificate
1999-12-02
2001-11-20
Metjahic, Safet (Department: 2862)
Electricity: measuring and testing
Magnetic
Magnetometers
C324S249000, C324S260000, C336S200000
Reexamination Certificate
active
06320376
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a magnetic field sensor which can be used for measuring a magnetic field generated by a current flowing through wiring, etc., and also to a system for measuring a magnetic field generated by a current flowing through the wiring, etc.
2. Description of the Related Art
In order to detect EMC (ElectroMagnetic Compatibility) of semiconductor integrated circuits and the like, a high-frequency current which flows to the semiconductor integrated circuits, etc. is measured. This high-frequency current can be measured by measuring a magnetic field which is generated by the current flowing through the semiconductor integrated circuits, etc.
A Hall effect device which utilizes the Hall effect is one of magnetic field sensors which can measure the magnetic field generated from the semiconductor integrated circuits, etc.
In order to measure a magnetic field, a current needs to be supplied to a semiconductor film or a metal film in the Hall effect device. This brings a problem that the Hall effect device consumes high electric power. The Hall effect device requires two input/output terminals for supplying the semiconductor film or the metal film with a current and two input/output terminals for measuring a voltage generated by a magnetic field. Therefore, it is difficult that the Hall effect device is miniaturized.
Another type of a magnetic field sensor, other than the Hall effect device, is one which utilizes electromagnetic induction. Such a magnetic field sensor includes a loop formed of a coaxial cable or conducting wires. The magnetic field sensor can measure the strength of a magnetic filed generated from the semiconductor integrated circuits, etc, by measuring the current which flows to the loop when the strength of the magnetic field varies.
Generally, the magnetic field sensor which utilizes electromagnetic induction is formed of a coaxial cable or conducting wires, etc., thus is large in size compared to the semiconductor integrated circuits. This means that the magnetic field sensor is too large to approach only the wiring from which a magnetic field to be measured is generated. That is, such a magnetic field sensor can not accurately measure the magnetic field which has been generated by a current flowing through a device, wiring, etc.
SUMMARY OF THE INVENTION
Accordingly, an object of the present invention is to provide a magnetic field sensor and a system for measuring a magnetic field, both of which can accurately measure a magnetic field.
Another object thereof is to provide a small-sized magnetic field sensor.
In order to achieve the above-described objects, according to the first aspect of the present invention, there is provided a magnetic field sensor comprising:
a first conductor layer having a first loop portion which is in an open loop shape and which includes two ends and a gap therebetween;
a second conductor layer having a second loop portion formed in an open loop shape on the first conductor layer; and
a third conductor layer formed on the second conductor layer and having a third loop portion which is formed in an open loop shape and which has two ends and a gap therebetween,
wherein the third loop portion is open in a direction substantially identical with an opening direction of the first loop portion and is formed in such a way that a first straight line, through which one end and other end of the first loop portion are connected with each other, substantially overlaps with a second straight line, through which one end and other end of the third loop portion are connected with each other,
the second loop portion is formed in such a way that one side of the second loop portion overlaps with the first and second straight lines of the first loop portion and the third loop portion or the one side is formed outward with respect to the first loop portion and the third loop portion, and that the one side crosses over the gaps of the first loop portion and the third loop portion from one ends of the first loop portion and the third loop portion to other ends thereof, and
the one side of the second loop portion is electrically connected to the one ends or the other ends of the first loop portion and the third loop portion, thereby forming a loop.
In the above structure, the second loop portion is formed in such a way that its one side is formed along the first straight line or in the outside of the first and third loop portion. Hence, when measuring a magnetic field from wiring, etc., the loop can approach the wiring, etc. Accordingly, the magnetic field sensor has a high degree of space resolution.
The magnetic field sensor may further comprise:
a first insulating layer which is formed between the first conductor layer and the second conductor layer and which has a hole in the one end or the other end of the first loop portion; and
a second insulating layer which is formed between the second conductor layer and the third conductor layer and which has a hole in a position substantially identical with a position of the hole of the first insulating layer,
wherein the second conductor layer includes a connector which electrically connects the second conductor layer to the first conductor layer via the hole of the first conductor layer, and
the third conductor layer includes a connector which electrically connects the third conductor layer to the second conductor layer via the hole of the second insulating layer.
The third loop portion may be formed in a shape which is substantially identical with a shape of the first loop portion.
Width of the second loop portion may be narrower than width of the first loop portion and the third loop portion, and the second loop portion may be electrically sealed by the first loop portion and the third loop portion.
The first straight line may connect an outer edge of the one end and an outer edge of the other end of the first loop portion, and the second straight line may connect an outer edge of the one end and an outer edge of the other end of the third loop portion.
The first conductor layer, the second conductor layer and the third conductor layer may be formed of a titanium film formed on the first and/or second insulating layers and a copper film formed on the titanium film.
The first conductor layer may include the first loop portion, which is formed in a latter “C” or “U” like shape, and further includes a first linear portion, which is connected to an opposite side of the gap of the first loop portion.
The second conductor layer may further include a second linear portion, which is so connected to the second loop portion as to be formed in a ladle like shape.
The third conductor layer may include the third loop portion, which is formed in a letter “C” or “U” like shape, and may further include a third linear portion, which is connected to an opposite side of the gap of the third loop portion.
According to the second aspect of the present invention, there is provided a system for measuring a magnetic field, comprising a magnetic field sensor, a measuring device and a wire, wherein,
the magnetic field sensor includes
a first conductor layer having a first loop portion which is formed in an open loop shape and which includes two ends and a gap therebetween,
a first insulating layer which is formed on the first conductor layer and which has a hole in one end of the first loop portion,
a second conductor layer which has a second loop portion,
having one side crossing over the gap of the first loop portion from other end of the first loop portion to one end along a first straight line, through which one end and other end of the first loop portion are connected with each other, or in an outside of the first loop, and
being formed in an open loop shape and having a connector electrically connecting the second conductor layer and the first conductor layer via the hole of the first insulating film,
a second insulating layer which is formed on the second conductor layer and which has a hole in a position substantially identical with a position of the
Arai Ken-ichi
Masuda Norio
Tamaki Naoya
Yamaguchi Masahiro
Aurora Reena
Hayes Soloway Hennessey Grossman & Hage PC
Metjahic Safet
NEC Corporation
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