Magnetic field sensor

Surgery – Truss – Pad

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32420716, A61B 505

Patent

active

054389909

ABSTRACT:
An implantable medical device uses a solid-state sensor for detecting the application of an external magnetic field. The sensor includes first and second split-drain field-effect transistors (MAGFETs) which are cross-coupled such that an external magnetic field perpendicular to the channel regions of the MAGFETs causes an increase in current through one split-drain half of each MAGFET, and a decrease in current through the other split-drain half of each MAGFET. The sensor also includes a high-gain differential amplifier coupled between the MAGFETs for detecting changes in the current conducted through the respective split-drain halves, and produces an output voltage which changes upon application of an external magnetic field to the implantable medical device. The magnetic sensor operates at low power supply voltages and bias currents available in implantable medical devices such as a cardiac pacemaker, so that current drain and power consumption are minimized.

REFERENCES:
patent: 3311111 (1967-03-01), Bowers
patent: 3714523 (1973-01-01), Bate
patent: 3714559 (1973-01-01), Bate
patent: 3766928 (1973-10-01), Goldberg et al.
patent: 3777762 (1973-12-01), Nielsen
patent: 3805769 (1974-04-01), Sessions
patent: 3920005 (1975-11-01), Gombrich
patent: 3945387 (1976-03-01), Adams
patent: 4120306 (1978-10-01), Renirk
patent: 4402322 (1983-09-01), Duggan
patent: 4585006 (1986-04-01), Livingston et al.
patent: 4739264 (1988-04-01), Kamiya et al.
patent: 4908527 (1990-03-01), Van Antwerp
patent: 4968953 (1990-11-01), Kanda et al.
patent: 5073858 (1991-12-01), Mills
patent: 5113862 (1992-05-01), Morazaud

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