Magnetic field sensor

Details Magnetic field sensor Magnetic field sensor

1988-04-14

1989-06-27

Larkins, William D.

357 55, H01L 2722

Patent

active

048434442

ABSTRACT:
A magnetic sensor is formed by a diode that includes a silicon element whose bulk is of high resistivity and low recombination velocity material and which includes spaced apart on its top surface n-type and p-type zones to which are provided electrical terminals. The element is treated to form at the top surface regions of high recombination velocity so located that when a voltage is applied between the electrical terminals to establish a flow of minority charge carriers between the p-type and n-type zones, such flow, in the absence of an applied magnetic field to be sensed, is little affected by the surface regions of high recombination velocity, but in the presence of any such field, is deflected into such surface regions and extinguished. Advantageously, the surface regions are formed by etching to form grooves and then ion implanting the grooved regions.

REFERENCES:
patent: 3747201 (1973-07-01), Arai
IBM Tech. Disclosure Bulletin, vol. 28, No. 9, Feb. 1986, pp. 4074-4076.
A Chovet et al., "Noise Limitations of Magnetodiodes", Sensors and Actuators, vol. 4, pp. 147-153 (1983), Based on a paper presented at Solid-State Transducers 83 Delft, the Netherlands, May 31-Jun. 3, 1983.
S. Kataoka, "Recent Development of Magnetoresistive Devices and Applications", The Circulars of the Electrotechnical Laboratory, Agency of Industrial Science and Technology, No. 182 (Dec. 1974).
S. Kordic, "Integrated Silicon Magnetic-Field Sensors", Sensors and Actuators, vX, n3-4, pp. 347-378, (Nov./Dec. 1986).
T. Yamada, "A New Highly Sensitive Magnetoresistive Effect in Semiconductors", Proceedings of the IX International Conference on the Physics of Semiconductors, vII, Moscow, Jul. 23-29, 1968, pp. 672-675.
G. H. Dohler, "Physics and Applications of Doping Superlattices", a paper from pp. 270-284 of the Book Two-Dimensional Systems, Physics and New Devices: Proceedings of the International Winterschool, Mauterndorf, Austria, 1986, published by Springer Verlag, Berlin, 1986.
G. H. Dohler, "n-i-p-i Doping Superlattices-Metastable Semiconductors with Tunable Properties", Journal of Vacuum Science and Technology, B. vol. I, No. II, Apr.-Jun. 1983, pp. 278-284.
J. Burtscher et al., "Die Rekombination in Thyristoren Und Gleichrichtern Aus Silizium: Ihr Einfluss Auf Die Durchlasskennlinie Und Das Freiwerdezeitverhalten", Solid-State Electronics, vol. 18, pp. 35-63 (Pergamon Press, Great Britain, 1975).
O. S. Lutes et al., "Sensitivity Limits on SOS Magnetodiodes", IEEE Transactions on Electron Devices, vol. ED-27, No. 11, pp. 2156-2156 (Nov. 1980).
M. Kimura et al., "SI Magnetic Sensor Composed of Two Combined PIN Diodes", Electron Letters, Jul. 31, 1986, vol. 22, No. 16, pp. 830-832.

Affiliated with

Also associated with

Rating

Magnetic field sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic field sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic field sensor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-817089