Magnetic field sensor

Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head

Reexamination Certificate

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Details

C324S252000

Reexamination Certificate

active

07016163

ABSTRACT:
A spin valve GMR sensor configured in a bridge configuration is provided. The bridge includes two spin valve element pairs. The spin valve elements include a free layer, a space layer, a pinned layer, and a bias layer. The bias layer includes a first bias layer and a second bias layer. The first and second spin valve element pairs are formed on separate metal layers and a current pulse is applied to the metal layers, which sets the direction of magnetization in the pinned layer of the first pair of spin valve elements to be antiparallel to the direction of magnetization in the pinned layer of the second pair of spin valve elements. The same effect can be accomplished by making the pinned layer substantially thicker than the second bias layer in the first spin valve element pair and the pinned layer is substantially thinner than the second bias layer in the second spin valve element pair and applying a magnetic field to the first and the second spin valve element pairs.

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White, Robert L. “Giant Magentoresitance Materials and Their Potential as Read Head Sensors,” IEEE Transactions on Magnetics, vol. 30, No. 2, Mar. 1994.

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