Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1983-11-14
1986-08-19
James, Andrew J.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
357 34, 357 43, 357 61, 307309, 324252, H01L 2722
Patent
active
046072713
ABSTRACT:
The magnetic field sensor is composed of a semiconductor magnetic field sensor, for example a magnetotransistor, and at least one NiFe or NiCo film disposed upon its surface. This film functions as a zero-crossing switch utilizing its magnetic induction/magnetic field-reversal hysteresis properties. The film is deposited immediately above the field sensitive zone of the magnetic field sensor with its easy axis oriented perpendicularly to the direction of current flow of the sensor. The semiconductor magnetic field sensor detects the magnetic induction generated by the film.
REFERENCES:
patent: 3389230 (1968-06-01), Hudson, Jr.
patent: 3489963 (1970-01-01), Gillett
patent: 3882409 (1975-05-01), Yagi
patent: 4476454 (1984-10-01), Aboaf et al.
patent: 4477853 (1984-10-01), Lemke
patent: 4499515 (1985-02-01), Piotrowski et al.
patent: 4506220 (1985-03-01), Sawada et al.
Middelhoek et al; "Silicon Micro-Transducers: A New Generation of Measuring Elements," Modern Electronic Measuring Systems, ed. Regtien, 1978, pp. 19-21.
Takamiya et al, "Differential Amplification Magnetic Sensor," IEEE Trans. on Elect. Devices, vol. ED-19, No. 10, Oct. 1972, pp. 1085-1090.
Middelhoek, "Thin Films".
Mitnikova et al, "Investigations of the Characteristics of Silicon Lateral Magnetotransistors with Two Measuring Collectors,"Sov. Phys. Semicond., 12(1), Jan. 1978, pp. 26-28.
Baltes et al, "Magnetic Field Micro-Sensor Based on Magneto-Resistive Comparators", Proc. Sensor '82, ed. Durst et al, Jan. 82, pp. 176-186.
Baltes Heinrich P.
Berchier Jean-Luc
Lienhard Heinz
Popovic Radivoje
Schneider Gernot
IGZ Landis & Gyr Zug AG
James Andrew J.
Mintel William
LandOfFree
Magnetic field sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetic field sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic field sensor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-396299